IPD33CN10NGATMA1 Infineon

IPD33CN10NGATMA1 - INFINEON の商品詳細ページです。

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IPD33CN10NGATMA1 の詳細情報

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型番IPD33CN10NGATMA1
メーカーINFINEON
Application SWITCHING
Avalanche Energy Rating (Eas) (mJ) 47
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min (V) 100
Drain Current-Max (ID) (A) 27
Drain-source On Resistance-Max (ohm) 0.033
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max (Cel) 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) (A) 108
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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