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IPD30N06S2L23ATMA3
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IPD30N06S2L23ATMA3 の詳細情報
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- メーカー情報
| 型番 | IPD30N06S2L23ATMA3 |
|---|---|
| メーカー | INFINEON |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 55 V |
| Drain Current-Max (ID) | 30 A |
| Drain-source On Resistance-Max | 0.03 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-252 |
| JESD-30 Code | R-PSSO-G2 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Min | -55 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 120 A |
| Reference Standard | AEC-Q101 |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | GULL WING |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
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