IPD30N03S4L-09 Infineon

IPD30N03S4L-09 - INFINEON の商品詳細ページです。

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IPD30N03S4L-09 の詳細情報

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型番IPD30N03S4L-09
メーカーINFINEON
Avalanche Energy Rating (Eas) 28 mJ
Avalanche Energy Rating (Eas) (mJ) 28
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
DS Breakdown Voltage-Min (V) 30
Drain Current-Max (ID) 30 A
Drain Current-Max (ID) (A) 30
Drain-source On Resistance-Max 0.009 ohm
Drain-source On Resistance-Max (ohm) 0.009
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 120 A
Pulsed Drain Current-Max (IDM) (A) 120
Qualification Status Not Qualified
Screening Level / Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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