IPB180N04S4-H0 Infineon

IPB180N04S4-H0 - INFINEON の商品詳細ページです。

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IPB180N04S4-H0 の詳細情報

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型番IPB180N04S4-H0
メーカーINFINEON
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 850 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 180 A
Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0011 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 720 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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