IPB100N04S4-02D Infineon

IPB100N04S4-02D - INFINEON の商品詳細ページです。

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IPB100N04S4-02D の詳細情報

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型番IPB100N04S4-02D
メーカーINFINEON
Avalanche Energy Rating (Eas) 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0022 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 231 W
Pulsed Drain Current-Max (IDM) 400 A
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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