IHW30N100T データシート Infineon

IHW30N100T - INFINEON の商品詳細ページです。

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IHW30N100T の詳細情報

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型番IHW30N100T
メーカーINFINEON
データシートProduct_list_pdf
Case Connection COLLECTOR
Collector Current-Max (IC) 30 A
Collector-emitter Voltage-Max 1000 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns
Gate-emitter Thr Voltage-Max 6.4 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 412 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 702 ns
Turn-on Time-Nom (ton) 90 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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