IGD01N120H2 データシート Infineon

IGD01N120H2 - INFINEON の商品詳細ページです。

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IGD01N120H2 の詳細情報

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型番IGD01N120H2
メーカーINFINEON
データシートProduct_list_pdf
Case Connection COLLECTOR
Collector Current-Max (IC) 3.2 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 3.9 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 28 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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