IGB30N60T データシート Infineon

IGB30N60T - INFINEON の商品詳細ページです。

1
No Image
2営業日以内に回答いたします

IGB30N60T の詳細情報

  • 仕様・詳細
  • メーカー情報
型番IGB30N60T
メーカーINFINEON
データシートProduct_list_pdf
Additional Feature HIGH SPEED
Case Connection COLLECTOR
Collector Current-Max (IC) 60 A
Collector-emitter Voltage-Max 600 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 5.7 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 187 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 382 ns
Turn-on Time-Nom (ton) 50 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

IGB30N60Tのレビュー

IGB30N60T のご注文について