IGB03N120H2 データシート Infineon

IGB03N120H2 - INFINEON の商品詳細ページです。

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IGB03N120H2 の詳細情報

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型番IGB03N120H2
メーカーINFINEON
データシートProduct_list_pdf
Case Connection COLLECTOR
Collector Current-Max (IC) 3 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-emitter Thr Voltage-Max 3.9 V
Gate-emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62.5 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 403 ns
Turn-on Time-Nom (ton) 16.1 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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