IFS100B12N3E4B31 Infineon

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IFS100B12N3E4B31 の詳細情報

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型番IFS100B12N3E4B31
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-emitter Voltage-Max 1200 V
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR
Gate-emitter Thr Voltage-Max 6.4 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X34
Number of Elements 6
Number of Terminals 34
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 515 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 610 ns
Turn-on Time-Nom (ton) 210 ns
VCEsat-Max 2.1 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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