FP25R12W2T4 Infineon

FP25R12W2T4 - INFINEON の商品詳細ページです。

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FP25R12W2T4 の詳細情報

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型番FP25R12W2T4
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 39 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Thr Voltage-Max 6.4 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X23
Number of Elements 7
Number of Terminals 23
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 175 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 520 ns
Turn-on Time-Nom (ton) 47 ns
VCEsat-Max 2.25 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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