F4-75R06W1E3 Infineon

F4-75R06W1E3 - INFINEON の商品詳細ページです。

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F4-75R06W1E3 の詳細情報

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  • メーカー情報
型番F4-75R06W1E3
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-emitter Voltage-Max 600 V
Configuration COMPLEX
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X11
Number of Elements 4
Number of Terminals 11
Operating Temperature-Max 175 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 275 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 330 ns
Turn-on Time-Nom (ton) 45 ns
VCEsat-Max 1.9 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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