型番 | F4-75R06W1E3 |
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メーカー | INFINEON |
Case Connection | ISOLATED |
Collector Current-Max (IC) | 100 A |
Collector-emitter Voltage-Max | 600 V |
Configuration | COMPLEX |
Gate-emitter Voltage-Max | 20 V |
JESD-30 Code | R-XUFM-X11 |
Number of Elements | 4 |
Number of Terminals | 11 |
Operating Temperature-Max | 175 Cel |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT Meter |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 275 W |
Qualification Status | Not Qualified |
Sub Category | Insulated Gate BIP Transistors |
Surface Mount | NO |
Terminal Form | UNSPECIFIED |
Terminal Position | UPPER |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON |
Turn-off Time-Nom (toff) | 330 ns |
Turn-on Time-Nom (ton) | 45 ns |
VCEsat-Max | 1.9 V |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
F4-75R06W1E3 - INFINEON の商品詳細ページです。