DF900R12IP4D Infineon

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DF900R12IP4D の詳細情報

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型番DF900R12IP4D
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 900 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X10
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5100 W
Qualification Status Not Qualified
Reference Standard UL APPROVED
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1300 ns
Turn-on Time-Nom (ton) 370 ns
VCEsat-Max 2.05 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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