DF80R12W2H3B11 Infineon

DF80R12W2H3B11 - INFINEON の商品詳細ページです。

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DF80R12W2H3B11 の詳細情報

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型番DF80R12W2H3B11
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 50 A
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X22
Number of Elements 2
Number of Terminals 22
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Nom (ton) 49 ns
VCEsat-Max 1.7 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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