DF160R12W2H3FB11 Infineon

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DF160R12W2H3FB11 の詳細情報

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型番DF160R12W2H3FB11
メーカーINFINEON
Case Connection ISOLATED
Collector-emitter Voltage-Max 1200 V
Configuration COMPLEX
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X30
Number of Elements 4
Number of Terminals 30
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 375 ns
Turn-on Time-Nom (ton) 40 ns
VCEsat-Max 1.7 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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