DF150R12RT4 Infineon

DF150R12RT4 - INFINEON の商品詳細ページです。

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DF150R12RT4 の詳細情報

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型番DF150R12RT4
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 150 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 175 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 790 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 490 ns
Turn-on Time-Nom (ton) 185 ns
VCEsat-Max 2.15 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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