DF1000R17IE4 Infineon

DF1000R17IE4 - INFINEON の商品詳細ページです。

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DF1000R17IE4 の詳細情報

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型番DF1000R17IE4
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 1000 A
Collector-emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Gate-emitter Thr Voltage-Max 6.4 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-PUFM-X12
Number of Elements 1
Number of Terminals 12
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6250 W
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1890 ns
Turn-on Time-Nom (ton) 720 ns
VCEsat-Max 2.45 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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