DDB6U180N16RR_B11 Infineon

DDB6U180N16RR_B11 - INFINEON の商品詳細ページです。

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DDB6U180N16RR_B11 の詳細情報

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型番DDB6U180N16RR_B11
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 140 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X26
Number of Elements 1
Number of Terminals 26
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 515 W
Reference Standard UL APPROVED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 620 ns
Turn-on Time-Nom (ton) 210 ns
VCEsat-Max 2.2 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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