D650S12T Infineon

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D650S12T の詳細情報

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型番D650S12T
メーカーINFINEON
Application FAST RECOVERY
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 2.25 V
JESD-30 Code O-CEDB-N2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 10100 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Output Current-Max 620 A
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style DISK BUTTON Meter
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 1200 V
Reverse Current-Max 20000 uA
Reverse Recovery Time-Max 5.3 us
Sub Category Rectifier Diodes
Surface Mount YES
Terminal Form NO LEAD
Terminal Position END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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