BUZ50A Infineon

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BUZ50A の詳細情報

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型番BUZ50A
メーカーINFINEON
Case Connection ISOLATED
Configuration SINGLE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (Abs) (ID) 2.5 A
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 5 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-MSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 4 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 105 ns
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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