BTS282Z E3230 Infineon

BTS282Z E3230 - INFINEON の商品詳細ページです。

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BTS282Z E3230 の詳細情報

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型番BTS282Z E3230
メーカーINFINEON
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
DS Breakdown Voltage-Min 49 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0095 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T7
JESD-609 Code e3
Number of Elements 1
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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