BSZ160N10NS3G Infineon

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BSZ160N10NS3G の詳細情報

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型番BSZ160N10NS3G
メーカーINFINEON
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.016 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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