BSZ100N06NS Infineon

BSZ100N06NS - INFINEON の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

BSZ100N06NS の詳細情報

  • 仕様・詳細
  • メーカー情報
型番BSZ100N06NS
メーカーINFINEON
Avalanche Energy Rating (Eas) 19 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 40 A
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.01 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 32 pF
JESD-30 Code S-PDSO-N3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -55 Cel
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style POST/STUD MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

BSZ100N06NSのレビュー

BSZ100N06NS のご注文について