BSS131H6327 Infineon

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BSS131H6327 の詳細情報

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型番BSS131H6327
メーカーINFINEON
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 240 V
DS Breakdown Voltage-Min (V) 240
Drain Current-Max (Abs) (ID) 0.11 A
Drain Current-Max (ID) 0.11 A
Drain Current-Max (ID) (A) 0.11
Drain-source On Resistance-Max 14 ohm
Drain-source On Resistance-Max (ohm) 14
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4.2 pF
Feedback Cap-Max (Crss) (pF) 4.2
J-STD-609 Code e3
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Operating Temperature-Min -55 Cel
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Power Dissipation-Max (W) 0.36
Reference Standard AEC-Q101
Screening Level / Reference Standard AEC-Q101
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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