BSP149 H6327 Infineon

BSP149 H6327 - INFINEON の商品詳細ページです。

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BSP149 H6327 の詳細情報

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型番BSP149 H6327
メーカーINFINEON
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (Abs) (ID) 0.66 A
Drain Current-Max (ID) 0.66 A
Drain-source On Resistance-Max 1.8 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 2.6 A
Reference Standard AEC-Q101
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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