BSM300GA120DN2 Infineon

BSM300GA120DN2 - INFINEON の商品詳細ページです。

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BSM300GA120DN2 の詳細情報

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型番BSM300GA120DN2
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 300 A
Collector-emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 120 ns
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-CUFM-X5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 2500 W
Power Dissipation-Max (Abs) 2500 W
Qualification Status Not Qualified
Rise Time-Max (tr) 220 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application GENERAL PURPOSE
Transistor Element Material SILICON
Turn-off Time-Max (toff) 800 ns
Turn-off Time-Nom (toff) 600 ns
Turn-on Time-Max (ton) 200 ns
Turn-on Time-Nom (ton) 100 ns
VCEsat-Max 3 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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