BSM100GB120DN2 Infineon

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BSM100GB120DN2 の詳細情報

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型番BSM100GB120DN2
メーカーINFINEON
Case Connection ISOLATED
Collector Current-Max (IC) 100 A
Collector-emitter Voltage-Max 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf) 100 ns
Gate-emitter Thr Voltage-Max 6.5 V
Gate-emitter Voltage-Max 20 V
JESD-30 Code R-CUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 150 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1400 W
Power Dissipation-Max (Abs) 700 W
Qualification Status Not Qualified
Rise Time-Max (tr) 160 ns
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Max (toff) 600 ns
Turn-off Time-Nom (toff) 400 ns
Turn-on Time-Max (ton) 260 ns
Turn-on Time-Nom (ton) 130 ns
VCEsat-Max 3 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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