BSF450NE7NH3XUMA1 Infineon

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BSF450NE7NH3XUMA1 の詳細情報

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型番BSF450NE7NH3XUMA1
メーカーINFINEON
Avalanche Energy Rating (Eas) 17 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.045 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 22 pF
JESD-30 Code R-XBCC-N2
JESD-609 Code e4
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Min -40 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 18 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Finish SILVER NICKEL
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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