BSC190N15NS3G Infineon

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BSC190N15NS3G の詳細情報

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型番BSC190N15NS3G
メーカーINFINEON
Application SWITCHING
Avalanche Energy Rating (Eas) (mJ) 170
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min (V) 150
Drain Current-Max (ID) (A) 50
Drain-source On Resistance-Max (ohm) 0.019
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JESD-30 Code R-PDSO-N8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max (Cel) 150
Operating Temperature-Min (Cel) -55
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (W) 125
Pulsed Drain Current-Max (IDM) (A) 200
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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