BSC16DN25NS3 G Infineon

BSC16DN25NS3 G - INFINEON の商品詳細ページです。

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BSC16DN25NS3 G の詳細情報

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型番BSC16DN25NS3 G
メーカーINFINEON
Application SWITCHING
Avalanche Energy Rating (Eas) 120 mJ
Avalanche Energy Rating (Eas) (mJ) 120
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 250 V
DS Breakdown Voltage-Min (V) 250
Drain Current-Max (ID) 10.9 A
Drain Current-Max (ID) (A) 10.9
Drain-source On Resistance-Max 0.165 ohm
Drain-source On Resistance-Max (ohm) 0.165
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 62.5 W
Pulsed Drain Current-Max (IDM) 44 A
Pulsed Drain Current-Max (IDM) (A) 44
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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