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BSC160N10NS3 G
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BSC160N10NS3 G の詳細情報
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- メーカー情報
| 型番 | BSC160N10NS3 G |
|---|---|
| メーカー | INFINEON |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 100 V |
| Drain Current-Max (Abs) (ID) | 42 A |
| Drain Current-Max (ID) | 8.8 A |
| Drain-source On Resistance-Max | 0.016 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-N8 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 Cel |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 60 W |
| Pulsed Drain Current-Max (IDM) | 168 A |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | TIN |
| Terminal Form | NO LEAD |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| 会社名称 | Infineon Technologies AG |
|---|---|
| 設立 | 1999 |
| 所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
| URL | http://www.infineon.com/ |
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