BSC067N06LS3G Infineon

BSC067N06LS3G - INFINEON の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

BSC067N06LS3G の詳細情報

  • 仕様・詳細
  • メーカー情報
型番BSC067N06LS3G
メーカーINFINEON
Avalanche Energy Rating (Eas) 47 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 50 A
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.0067 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

BSC067N06LS3Gのレビュー

BSC067N06LS3G のご注文について