BSC050N04LSG Infineon

BSC050N04LSG - INFINEON の商品詳細ページです。

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BSC050N04LSG の詳細情報

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型番BSC050N04LSG
メーカーINFINEON
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Application SWITCHING
Avalanche Energy Rating (Eas) 35 mJ
Avalanche Energy Rating (Eas) (mJ) 35
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DLA Qualification Not Qualified
DS Breakdown Voltage-Min 40 V
DS Breakdown Voltage-Min (V) 40
Drain Current-Max (ID) 18 A
Drain Current-Max (ID) (A) 18
Drain-source On Resistance-Max 0.0072 ohm
Drain-source On Resistance-Max (ohm) 0.0072
FET Technology METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code e3
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Operating Temperature-Max (Cel) 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 340 A
Pulsed Drain Current-Max (IDM) (A) 340
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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