BSC010N04LSATMA1 Infineon

BSC010N04LSATMA1 - INFINEON の商品詳細ページです。

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BSC010N04LSATMA1 の詳細情報

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型番BSC010N04LSATMA1
メーカーINFINEON
Avalanche Energy Rating (Eas) 330 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (Abs) (ID) 100 A
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.0013 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 139 W
Pulsed Drain Current-Max (IDM) 400 A
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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