BG3130RE6327 Infineon

BG3130RE6327 - INFINEON の商品詳細ページです。

1
No Image
  • 個
２営業日以内に回答いたします
この商品のお問い合わせ

BG3130RE6327 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番BG3130RE6327
メーカーINFINEON
Additional Feature LOW NOISE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (Abs) (ID) 0.025 A
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

BG3130RE6327のレビュー

BG3130RE6327 のご注文について