BG3130E6327 Infineon

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BG3130E6327 の詳細情報

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型番BG3130E6327
メーカーINFINEON
Additional Feature LOW NOISE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (Abs) (ID) 0.025 A
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G6
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode DUAL GATE, DEPLETION MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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