BF5030W Infineon

BF5030W - INFINEON の商品詳細ページです。

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BF5030W の詳細情報

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  • メーカー情報
型番BF5030W
メーカーINFINEON
Additional Feature GATE PROTECTED
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 8 V
Drain Current-Max (Abs) (ID) 0.025 A
Drain Current-Max (ID) 0.025 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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