BCR08PNE6327 Infineon

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BCR08PNE6327 の詳細情報

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型番BCR08PNE6327
メーカーINFINEON
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.36
Collector Current-Max (IC) 0.1 A
Collector-base Capacitance-Max 2 pF
Collector-emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN AND PNP
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Sub Category BIP General Purpose Small Signal
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 170 MHz
VCEsat-Max 0.3 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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