BC858CE6327 Infineon

BC858CE6327 - INFINEON の商品詳細ページです。

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BC858CE6327 の詳細情報

  • 仕様・詳細
  • メーカー情報
型番BC858CE6327
メーカーINFINEON
Collector Current-Max (IC) 0.1 A
Collector-emitter Voltage-Max 30 V
Configuration SINGLE
DC Current Gain-Min (hFE) 420
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 Cel
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.33 W
Power Dissipation-Max (Abs) 0.33 W
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
VCEsat-Max 0.65 V
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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