BAW101E6327 Infineon

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BAW101E6327 の詳細情報

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型番BAW101E6327
メーカーINFINEON
Additional Feature TR, 7 INCH; 3000
Application HIGH VOLTAGE
Breakdown Voltage-Min 300 V
Configuration SEPARATE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4.5 A
Number of Elements 2
Number of Phases 1
Number of Terminals 4
Operating Temperature-Max 150 Cel
Operating Temperature-Min -65 Cel
Output Current-Max 0.25 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE Meter
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.35 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 300 V
Reverse Current-Max 0.15 uA
Reverse Recovery Time-Max 1 us
Reverse Test Voltage 250 V
Sub Category Other Diodes
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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