BAR8902LRHE6327XTSA1 Infineon

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BAR8902LRHE6327XTSA1 の詳細情報

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型番BAR8902LRHE6327XTSA1
メーカーINFINEON
Additional Feature LOW DISTORTION
Application SWITCHING
Breakdown Voltage-Min 80 V
Configuration SINGLE
Diode Capacitance-Max 0.35 pF
Diode Element Material SILICON
Diode Forward Resistance-Max 1.5 ohm
Diode Type PIN DIODE
Frequency Band L BAND
JESD-30 Code R-XBCC-N2
JESD-609 Code e4
Minority Carrier Lifetime-Nom 0.8 us
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 Cel
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Power Dissipation-Max 0.25 W
Surface Mount YES
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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