型番 | BAR6302LE6327 |
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メーカー | INFINEON |
Application | SWITCHING |
Breakdown Voltage-Min | 50 V |
Configuration | SINGLE |
Diode Capacitance-Max | 0.3 pF |
Diode Capacitance-Nom | 0.25 pF |
Diode Element Material | SILICON |
Diode Forward Resistance-Max | 2 ohm |
Diode Res Test Current | 5 mA |
Diode Res Test Frequency | 100 MHz |
Diode Type | PIN DIODE |
Frequency Band | S BAND |
JESD-30 Code | R-XBCC-N2 |
JESD-609 Code | e4 |
Minority Carrier Lifetime-Nom | 0.075 us |
Moisture Sensitivity Level | 1 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Temperature-Max | 150 Cel |
Package Body Material | UNSPECIFIED |
Package Shape | RECTANGULAR |
Package Style | CHIP CARRIER Meter |
Peak Reflow Temperature (Cel) | 260 |
Power Dissipation-Max | 0.25 W |
Reverse Test Voltage | 5 V |
Sub Category | PIN Diodes |
Surface Mount | YES |
Technology | POSITIVE-INTRINSIC-NEGATIVE |
Terminal Finish | GOLD |
Terminal Form | NO LEAD |
Terminal Position | BOTTOM |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
BAR6302LE6327 - INFINEON の商品詳細ページです。