AIKW30N60CT Infineon

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AIKW30N60CT の詳細情報

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型番AIKW30N60CT
メーカーINFINEON
Application POWER CONTROL
Collector Current-Max (IC) 60 A
Collector Current-Max (IC) (A) 60
Collector-emitter Voltage-Max 600 V
Collector-emitter Voltage-Max (V) 600
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5.7 V
Gate-emitter Thr Voltage-Max (V) 5.7
Gate-emitter Voltage-Max 20 V
Gate-emitter Voltage-Max (V) 20
J-STD-609 Code e3
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 Cel
Operating Temperature-Max (Cel) 175
Operating Temperature-Min -40 Cel
Operating Temperature-Min (Cel) -40
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT Meter
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 187 W
Power Dissipation-Max (W) 187
Reference Standard AEC-Q101
Screening Level / Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 388 ns
Turn-off Time-Nom (toff) (ns) 388
Turn-on Time-Nom (ton) 50 ns
Turn-on Time-Nom (ton) (ns) 50
VCEsat-Max 2.05 V
VCEsat-Max (V) 2.05
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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