型番 | 2N7002DWH6327XTSA1 |
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メーカー | INFINEON |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.3 A |
Drain-source On Resistance-Max | 3 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 3 pF |
JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 |
Number of Elements | 2 |
Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE Meter |
Polarity/Channel Type | N-CHANNEL |
Qualification Status | Not Qualified |
Surface Mount | YES |
Terminal Finish | TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
会社名称 | Infineon Technologies AG |
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設立 | 1999 |
所在地 | Am Campeon 1-12 85579 Neubiberg Germany |
URL | http://www.infineon.com/ |
2N7002DWH6327XTSA1 - INFINEON の商品詳細ページです。