2N7002 Infineon

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2N7002 の詳細情報

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型番2N7002
メーカーINFINEON
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 0.115 A
Drain Current-Max (ID) 0.075 A
Drain-source On Resistance-Max 0.0075 ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1 pF
JEDEC-95 Code TO-236
JESD-30 Code R-CDSO-N3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 85 Cel
Operating Temperature-Min -65 Cel
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER Meter
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Pulsed Drain Current-Max (IDM) 0.8 A
Qualification Status Not Qualified
Reference Standard AEC-Q101
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish GOLD
Terminal Form FLAT
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application AMPLIFIER
Transistor Element Material SILICON
会社名称Infineon Technologies AG
設立1999
所在地Am Campeon 1-12 85579 Neubiberg Germany
URLhttp://www.infineon.com/

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