型番 | 71P74804S250BQ |
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メーカー | IDT |
Access Time-Max | 0.45 ns |
Access Time-Max (ns) | 0.45 |
Additional Feature | PIPELINED ARCHITECTURE |
Clock Frequency-Max (MHz) | 250 |
Clock Frequency-Max (fCLK) | 250 MHz |
DLA Qualification | Not Qualified |
I/O Type | SEPARATE |
J-STD-609 Code | e0 |
JESD-30 Code | R-PBGA-B165 |
JESD-609 Code | e0 |
Length | 15 mm |
Length (mm) | 15 |
Memory Density (bits) | 18874368 |
Memory IC Type | QDR SRAM |
Memory Organization | 1MX18 |
Memory Width | 18 |
Moisture Sensitivity Level | 3 |
Number of Functions | 1 |
Number of Terminals | 165 |
Number of Words (words) | 1048576 |
Number of Words Code | 1M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max (Cel) | 70 |
Operating Temperature-Min (Cel) | 0 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | TBGA |
Package Equivalence Code | BGA165,11X15,40 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, THIN PROFILE Meter |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Cel) | 225 |
Power Supplies (V) | 1.5/1.8,1.8 |
Seated Height-Max (mm) | 1.2 |
Standby Current-Max (A) | 0.375 |
Standby Voltage-Min (V) | 1.7 |
Sub Category | SRAMs |
Supply Current-Max (mA) | 850 |
Supply Voltage-Max (V) | 1.9 |
Supply Voltage-Min (V) | 1.7 |
Supply Voltage-Nom (V) | 1.8 |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | COMMERCIAL |
Terminal Finish | TIN LEAD |
Terminal Form | BALL |
Terminal Pitch (mm) | 1 |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 30 |
Width (mm) | 13 |
会社名称 | Integrated Device Technology, Inc. |
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設立 | 1980 |
所在地 | 6024 Silver Creek Valley Road, San Jose, CA 95138 USA |
URL | http://www.idt.com/ |
71P74804S250BQ - IDT の商品詳細ページです。