| 型番 | H5MS2622JFRJ3M |
|---|---|
| メーカー | HYUNDAI |
| データシート | ![]() |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 5 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 166 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 |
| JESD-30 Code | R-PBGA-B90 |
| JESD-609 Code | e1 |
| Length | 13 mm |
| Memory Density | 268435456 bit |
| Memory IC Type | DDR1 DRAM |
| Memory Width | 32 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 90 |
| Number of Words | 8388608 words |
| Number of Words Code | 8M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 85 Cel |
| Operating Temperature-Min | -30 Cel |
| Organization | 8MX32 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | VFBGA |
| Package Equivalence Code | BGA90,9X15,32 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 1.8 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 4096 |
| Seated Height-Max | 1 mm |
| Self Refresh | YES |
| Sequential Burst Length | 2,4,8 |
| Standby Current-Max | 1.0E-5 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.105 mA |
| Supply Voltage-Max (Vsup) | 1.95 V |
| Supply Voltage-Min (Vsup) | 1.7 V |
| Supply Voltage-Nom (Vsup) | 1.8 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | OTHER |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| Terminal Form | BALL |
| Terminal Pitch | 0.8 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Width | 8 mm |
| 会社名称 | HYNIX INC. |
|---|---|
| URL | http://www.hynix.com/ |
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