型番 | H5MS2622JFRJ3M |
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メーカー | HYUNDAI |
データシート | ![]() |
Access Mode | FOUR BANK PAGE BURST |
Access Time-Max | 5 ns |
Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 166 MHz |
I/O Type | COMMON |
Interleaved Burst Length | 2,4,8 |
JESD-30 Code | R-PBGA-B90 |
JESD-609 Code | e1 |
Length | 13 mm |
Memory Density | 268435456 bit |
Memory IC Type | DDR1 DRAM |
Memory Width | 32 |
Number of Functions | 1 |
Number of Ports | 1 |
Number of Terminals | 90 |
Number of Words | 8388608 words |
Number of Words Code | 8M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 Cel |
Operating Temperature-Min | -30 Cel |
Organization | 8MX32 |
Output Characteristics | 3-STATE |
Package Body Material | PLASTIC/EPOXY |
Package Code | VFBGA |
Package Equivalence Code | BGA90,9X15,32 |
Package Shape | RECTANGULAR |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter |
Peak Reflow Temperature (Cel) | 260 |
Power Supplies | 1.8 V |
Qualification Status | Not Qualified |
Refresh Cycles | 4096 |
Seated Height-Max | 1 mm |
Self Refresh | YES |
Sequential Burst Length | 2,4,8 |
Standby Current-Max | 1.0E-5 Amp |
Sub Category | DRAMs |
Supply Current-Max | 0.105 mA |
Supply Voltage-Max (Vsup) | 1.95 V |
Supply Voltage-Min (Vsup) | 1.7 V |
Supply Voltage-Nom (Vsup) | 1.8 V |
Surface Mount | YES |
Technology | CMOS |
Temperature Grade | OTHER |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
Terminal Form | BALL |
Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM |
Time@Peak Reflow Temperature-Max (s) | 20 |
Width | 8 mm |
会社名称 | HYNIX INC. |
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URL | http://www.hynix.com/ |
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