| 型番 | H5DU5162ETR-E3C |
|---|---|
| メーカー | HYUNDAI |
| データシート | ![]() |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max | 0.7 ns |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (fCLK) | 200 MHz |
| I/O Type | COMMON |
| Interleaved Burst Length | 2,4,8 |
| JESD-30 Code | R-PBGA-B60 |
| JESD-609 Code | e6 |
| Length | 12 mm |
| Memory Density | 536870912 bit |
| Memory IC Type | DDR1 DRAM |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 60 |
| Number of Words | 33554432 words |
| Number of Words Code | 32M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0 Cel |
| Organization | 32MX16 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | VBGA |
| Package Equivalence Code | TSSOP66,.46 |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE Meter |
| Peak Reflow Temperature (Cel) | 260 |
| Power Supplies | 2.6 V |
| Qualification Status | Not Qualified |
| Refresh Cycles | 8192 |
| Seated Height-Max | 1 mm |
| Self Refresh | YES |
| Sequential Burst Length | 2,4,8 |
| Standby Current-Max | 0.005 Amp |
| Sub Category | DRAMs |
| Supply Current-Max | 0.26 mA |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Tin/Bismuth (Sn98Bi2) |
| Terminal Form | BALL |
| Terminal Pitch | 1 mm |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 20 |
| Width | 8 mm |
| 会社名称 | HYNIX INC. |
|---|---|
| URL | http://www.hynix.com/ |
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