H55S5122DFR-60M データシート Hyundai

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H55S5122DFR-60M の詳細情報

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型番H55S5122DFR-60M
メーカーHYUNDAI
データシートProduct_list_pdf
Access Time-Max 5.4 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Terminals 90
Number of Words 16777216 words
Number of Words Code 16M
Operating Temperature-Max 85 Cel
Operating Temperature-Min -30 Cel
Organization 16MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code FBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, FINE PITCH Meter
Peak Reflow Temperature (Cel) 260
Power Supplies 1.8 V
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0003 Amp
Sub Category DRAMs
Supply Current-Max 0.1 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
会社名称HYNIX INC.
URLhttp://www.hynix.com/

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