| 型番 | HY57V641620ET-7 |
|---|---|
| メーカー | HYNIX |
| Access Mode | FOUR BANK PAGE BURST |
| Access Time-Max (ns) | 5.4 |
| Additional Feature | AUTO/SELF REFRESH |
| Clock Frequency-Max (MHz) | 143 |
| DLA Qualification | Not Qualified |
| I/O Type | COMMON |
| Interleaved Burst Length | 1,2,4,8 |
| J-STD-609 Code | e0 |
| JESD-30 Code | R-PDSO-G54 |
| Length (mm) | 22.238 |
| Memory Density (bits) | 67108864 |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Organization | 4MX16 |
| Memory Width | 16 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 54 |
| Number of Words (words) | 4194304 |
| Number of Words Code | 4M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max (Cel) | 70 |
| Operating Temperature-Min (Cel) | -40 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | TSOP2 |
| Package Equivalence Code | TSOP54,.46,32 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE, THIN PROFILE Meter |
| Power Supplies (V) | 3.3 |
| Refresh Cycles | 4096 |
| Seated Height-Max (mm) | 1.194 |
| Self Refresh | YES |
| Sequential Burst Length | 1,2,4,8,FP |
| Standby Current-Max (A) | 0.002 |
| Sub Category | DRAMs |
| Supply Current-Max (mA) | 150 |
| Supply Voltage-Max (V) | 3.6 |
| Supply Voltage-Min (V) | 3 |
| Supply Voltage-Nom (V) | 3.3 |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Pitch (mm) | 0.8 |
| Terminal Position | DUAL |
| Width (mm) | 10.16 |
| 会社名称 | SK HYNIX INC. |
|---|---|
| 設立 | 1983 |
| 所在地 | 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do, KOREA |
| URL | http://www.hynix.com/ |
HY57V641620ET-7 - HYNIX の商品詳細ページです。